178GHz InP/InGaAs HBT with /spl mu/-bridge

Abstract

An InP-based single-heterojunction bipolar transistor (SHBT) with base mu-bridge and emitter air-bridge is reported in this paper. Because those bridges reduce parasite greatly, cutoff frequency f<sub>T </sub> of the 2 times 12.5 mum<sup>2</sup> InP SHBT without de-embedding reaches 178GHz. Such device can output more power than traditional structure HBT with the same f<sub>T</sub> because of wider emitter. And it is critical to support high-speed low to medium power applications, such as OEIC receivers and analog-to-digital converters

4 Figures and Tables

Cite this paper

@article{Yu2006178GHzIH, title={178GHz InP/InGaAs HBT with /spl mu/-bridge}, author={Jinyong Yu and Xinyu Liu and Shubing Su and Runmei Wang and Anhuai Xu and Ming Qi}, journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings}, year={2006}, pages={872-874} }