170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

@article{Testa2014170GS,
  title={170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier},
  author={Paolo Valerio Testa and Guido Belfiore and Robert Paulo and Corrado Carta and Frank Ellinger},
  journal={IEEE Journal of Solid-State Circuits},
  year={2014},
  volume={50},
  pages={2228-2238}
}
This paper presents a travelling-wave amplifier (TWA) for wideband applications implemented in a 0.13 μm SiGe BiCMOS technology ( ft= 300 GHz, fmax= 500 GHz). The gain cell employed in the TWA is designed to compensate the synthetic-line losses at high frequencies in order to extend the bandwidth as well as the gain bandwidth product (GBP). A gain of 10 dB and a 3 dB bandwidth of 170 GHz are measured for the fabricated circuit. The circuit analysis is presented to illustrate how the bandwidth… CONTINUE READING
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