16nm with 193nm immersion lithography and double exposure

@inproceedings{Axelrad201016nmW1,
  title={16nm with 193nm immersion lithography and double exposure},
  author={V. Axelrad and M. Smayling},
  booktitle={Advanced Lithography},
  year={2010}
}
Gridded Design Rules (GDR) in combination with lines/ cuts double patterning allow imaging of 16nm designs with 193nm immersion lithography. Highly regular lines/ cut patterns result in the existence of a well-defined optimal set of lithographic conditions. Since cuts are all of identical shape and relatively sparse, good image quality can be obtained with minimal or simplified pattern correction (OPC equivalent) to compensate for proximity effects. The use of local interconnect (LI) is shown… Expand
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