14nm FDSOI upgraded device performance for ultra-low voltage operation

Abstract

A performance upgrade of our 14nm FDSOI technology is reported in this paper. Compared to our previous 14nm FDSOI assessment, a -17% delay at the same leakage is demonstrated. We show that the AC performance of 28nm FDSOI at a 0.9V supply voltage is reached at 0.6V in 14nm FDSOI technology. This corresponds to a 50% increase in frequency at the same dynamic… (More)

Cite this paper

@article{Weber201514nmFU, title={14nm FDSOI upgraded device performance for ultra-low voltage operation}, author={Olivier Weber and Emmanuel Josse and J. Mazurier and N. Degors and Sophal Chhun and Philippe Maury and S. Lagrasta and D. Barge and J. P. Manceau and Michel Haond}, journal={2015 Symposium on VLSI Technology (VLSI Technology)}, year={2015}, pages={T168-T169} }