1200V 6A SiC BJTs with very low VCESAT and fast switching

@article{Lindgren20101200V6S,
  title={1200V 6A SiC BJTs with very low VCESAT and fast switching},
  author={Anders Lindgren and Martin Domeij},
  journal={2010 6th International Conference on Integrated Power Electronics Systems},
  year={2010},
  pages={1-5}
}
This paper reports measurements and simulations made on 1200V 6A Silicon carbide (SiC) bipolar junction transistors. A SPICE model for the transistor has been developed and verified by static and dynamic measurements. Fast switching and low on state losses have been measured and SPICE simulated on the component level. To further describe the impact on a systems level a simplified boost converter has been simulated with regards to power losses and cooling. 
9 Citations
2 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-9 of 9 extracted citations

References

Publications referenced by this paper.
Showing 1-2 of 2 references

2.2 kV SiC BJTs with low VCESAT and fast switching

  • M. Domeij et. al
  • to be published in the Proceedings of the…
  • 2009
2 Excerpts

IEEE Electron Device Letters

  • J. Zhang, P. Alexandrov, T. Burke, J. H. Zhao
  • Volume 27, No. 5, p. 368
  • 2006
2 Excerpts

Similar Papers

Loading similar papers…