1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

@article{Singh20121200VS,
  title={1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications},
  author={Ranbir Singh and Siddarth G. Sundaresan and Eric Lieser and Michael Digangi},
  journal={2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2012},
  pages={2516-2520}
}
The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of <;100 μA at 325 °C, turn-on and turn-off switching transients of <;15 ns at 250 °C, current gain as high as 72, on-resistance as low as 235 mΩ, second-breakdown-free square RBSOA, and short-circuit withstand time of 22 μs were measured on the SiC SJTs. For switching 7 A and 800 V at 100 kHz, the SiC SJT + GeneSiC… CONTINUE READING

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References

Publications referenced by this paper.
Showing 1-4 of 4 references

Application of reliability test standards to SiC Power MOSFETs

2011 International Reliability Physics Symposium • 2011
View 1 Excerpt

Characterization and Modeling of High-Switching Speed behavior of SiC Active Devices

Z. Chen
M.S. Thesis, Virginia Tech • 2009
View 1 Excerpt

Alder, “Second Breakdown in Power Transistors Due to Avalanche Injection

B. A. Beatty, M.S.S. Khanna
IEEE Trans. Electron Dev. ED-23(8), • 1976
View 1 Excerpt

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