110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength

@article{Kato1994110GHz5M,
  title={110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelength},
  author={Kazumi Kato and A. Kozen and Yoshifumi Muramoto and Y. Itaya and Tadao Nagatsuma and M. Yaita},
  journal={IEEE Photonics Technology Letters},
  year={1994},
  volume={6},
  pages={719-721}
}
A mushroom-mesa structure is proposed to reduce the CR-time constant which originates from the waveguide photodiode structure. Experimental results at a 1.55-/spl mu/m wavelength show that the multimode waveguide p-i-n photodiode with mushroom-mesa structure has an electrical 3-dB bandwidth of more than 75 GHz in the frequency domain and an electrical 3-dB bandwidth of 110 GHz in the time domain. The external quantum efficiency is 50% or 0.63 A/W, which leads to a record bandwidth-efficiency… CONTINUE READING

From This Paper

Figures, tables, and topics from this paper.

Explore Further: Topics Discussed in This Paper

Citations

Publications citing this paper.
Showing 1-10 of 42 extracted citations

Analysis, circuit modeling, and optimization of mushroom waveguide photodetector (mushroom-WGPD)

Journal of Lightwave Technology • 2005
View 4 Excerpts
Method Support
Highly Influenced

10-Gb/s Planar InGaAs P-I-N Photodetectors

IEEE Sensors Journal • 2010
View 3 Excerpts
Highly Influenced

Mushroom-mesa vertical incidence photodiodes

2017 16th International Conference on Optical Communications and Networks (ICOCN) • 2017
View 1 Excerpt

High-Speed Photodiodes

IEEE Journal of Selected Topics in Quantum Electronics • 2014
View 1 Excerpt

References

Publications referenced by this paper.
Showing 1-8 of 8 references

108-GHz GaInAshP photodiodes with integrated bias tees and matched resistors,’

Wey, K. S. Giboney, +4 authors G. Y. Robinson
IEEE Photon. Technol. Lett., • 1993

A high - efficiency 50 GHz InGaAs multimode waveguide photodete ‘ ctor

K. Wakita K. Kawano, I. Kotaka, H. Asai, Y. Kawamura, M. Naganuma
IEEE J . Quantum Electron . • 1992

Design of InGaAsnnAlAs multiple quantum well ( MQW ) optical modulators

S. Hata Kato, K. Kawano, A. Kozen
IEEE J . Quantum Electron . • 1992

Ultrawide - band long - wavelength pi - n photodetectors

S. Hata K. Kato, A. Kozen, J. Yoshida, K. Kawano
1987

High-speed zero-bias waveguide photodetectors,

J. E. Bowers, C. A. Burrus
Electron. Lett., • 1986

50 GHz InGaAs edge - coupled pin photodetector

S. Hata, A. Kozen, J. Yoshida, K. Kawano
-1