11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

@article{Kim2017114A5,
  title={11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory},
  author={Chulbum Kim and Ji-Ho Cho and Woopyo Jeong and Il-Han Park and HyunWook Park and D. Kim and Dae-Woon Kang and Sung-Hoon Lee and J. Lee and Wontae Kim and Jiyoon Park and Yang-Lo Ahn and Seung-Bum Kim and Hyun-Jun Yoon and J. Yu and Nayoung Choi and Yelim Kwon and N. Kim and Hwajun Jang and Jonghoon Park and Seunghwan Song and Yongha Park and Jinbae Bang and Sang-ki Hong and Byunghoon Jeong and Hyunjin Kim and C. Lee and Young-Sun Min and Inryul Lee and In-Mo Kim and Sung-Hoon Kim and Dong-Kyu Yoon and Kisung Kim and Youngdon Choi and Moosung Kim and Hyunggon Kim and Pansuk Kwak and Jeong-Don Ihm and Dae-Seok Byeon and Kitae Park and Kyehyun Kyung},
  journal={2017 IEEE International Solid-State Circuits Conference (ISSCC)},
  year={2017},
  pages={202-203}
}
  • Chulbum Kim, Ji-Ho Cho, +41 authors Kyehyun Kyung
  • Published 2017
  • Engineering, Computer Science
  • 2017 IEEE International Solid-State Circuits Conference (ISSCC)
    • The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra-fast processing, higher capacity storage, lower cost, and lower power operation. SSDs employing 3D NAND are a promising to meet these requirements. Since the introduction of 3D NAND technology to marketplace in 2014 [1], the memory array size has… CONTINUE READING
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