10kV SiC MOSFET split output power module

Abstract

The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that… (More)

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Cite this paper

@article{Beczkowski201510kVSM, title={10kV SiC MOSFET split output power module}, author={Szymon Michal Beczkowski and Helong Li and C. Uhrenfeldt and E U Eni and Stig Munk-Nielsen}, journal={2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)}, year={2015}, pages={1-7} }