100-mV 44-µW 2.4-GHz LNA in 16 nm FinFET technology

@article{Lu2016100mV42,
  title={100-mV 44-µW 2.4-GHz LNA in 16 nm FinFET technology},
  author={Y. R. Lu and Jun-De Jin},
  journal={2016 IEEE MTT-S International Microwave Symposium (IMS)},
  year={2016},
  pages={1-3}
}
  • Y. R. Lu, Jun-De Jin
  • Published 2016 in
    2016 IEEE MTT-S International Microwave Symposium…
To achieve both ultra-low-voltage (ULV) and ultra-low-power (ULP), we adopted the sub-threshold design on gate and near-triode design on drain terminals. The proposed low-noise amplifier (LNA) achieves a power gain of 6.9 dB and a noise figure (NF) of 3.0 dB at 2.4 GHz. The PDC is 44 μW under a VDD of 100 mV. The input and output matching are -10.4 dB and -5.7 dB, respectively. The LNA is fabricated in TSMC FinFET Plus CMOS technology. 
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