100 W GaN HEMT power amplifier module with > 60% efficiency over 100–1000 MHz bandwidth

@article{Krishnamurthy2010100WG,
  title={100 W GaN HEMT power amplifier module with > 60% efficiency over 100–1000 MHz bandwidth},
  author={Karthik Krishnamurthy and Teen Driver and Ramakrishna Vetury and Jason Martin},
  journal={2010 IEEE MTT-S International Microwave Symposium},
  year={2010},
  pages={940-943}
}
We have demonstrated a decade bandwidth 100 W GaN HEMT power amplifier module with 15.5–18.6 dB gain, 104–121 W CW output power and 61.4–76.6 % drain efficiency over the 100–1000 MHz band. The 2 × 2 inch compact power amplifier module combines four 30 W lossy matched broadband GaN HEMT PAs packaged in a ceramic SO8 package. Each of the 4 devices is fully matched to 50 Ω and obtains 30.8–35.7 W with 68.6–79.6 % drain efficiency over the band. The packaged amplifiers contain a GaN on SiC device… CONTINUE READING
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