100 GHz Transistors from Wafer Scale Epitaxial Graphene

@inproceedings{Lin2010100GT,
  title={100 GHz Transistors from Wafer Scale Epitaxial Graphene},
  author={Yu-Ming Lin and Christos Dimitrakopoulos and Keith A. Jenkins and Damon B. Farmer and Hsin-Ying Chiu and Alfred Grill and Phaedon Avouris},
  year={2010}
}
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications… CONTINUE READING
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