10-Gb/s Direct Modulation up to 100 $^{\circ}$C Using 1.3- $\mu$m-Range Metamorphically Grown Strain Compensated InGaAs–GaAs MQW Laser on GaAs Substrate

@article{Arai200910GbsDM,
  title={10-Gb/s Direct Modulation up to 100  \$^\{\circ\}\$C Using 1.3- \$\mu\$m-Range Metamorphically Grown Strain Compensated InGaAs–GaAs MQW Laser on GaAs Substrate},
  author={Masakazu Arai and Takashi Tadokoro and Takeshi Fujisawa and Wataru Kobayashi and Kiichi Nakashima and Masahiro Yuda and Y.. Kondo},
  journal={IEEE Photonics Technology Letters},
  year={2009},
  volume={21},
  pages={1344-1346}
}
We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25degC and 100degC, respectively. A 10-km single-mode fiber error-free… CONTINUE READING