10 ps timing with highly irradiated 3D trench silicon pixel sensors

  title={10 ps timing with highly irradiated 3D trench silicon pixel sensors},
  author={Andrea Lampis and Federica Borgato and Davide Brundu and Alessandro Cardini and Gianni Cossu and G-F. Dalla Betta and Michela Garau and L. La Delfa and Adriano Lai and Angelo Loi and M. M. Obertino and Gabriele Simi and Stefania Vecchi},
  journal={Journal of Instrumentation},
In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of 2.5 × 1016 1 MeV neq cm−2. This feature and a detection efficiency close to 99% make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments. 

Front-end Electronics for Timing with pico-second precision using 3D Trench Silicon Sensors

The next generation of collider experiments require tracking detectors with extreme performance capabilities in terms of spatial resolution (tens of µm), radiation hardness (1017 1 MeV neq/cm2) and

Intrinsic timing properties of ideal 3D-trench silicon sensor with fast front-end electronics

: This paper describes the fundamental timing properties of a single-pixel sensor for charged particle detection based on the 3D-trench silicon structure. We derive the results both analytically and



First characterisation of 3D pixel detectors irradiated at extreme fluences

Intrinsic time resolution of 3D-trench silicon pixels for charged particle detection

The results obtained on the first batch of TIMESPOT silicon sensors, based on a novel 3D MEMS (micro electro-mechanical systems) design, are described, showing the performance of other ongoing silicon sensor developments has been matched and overcome, while using a technology known to be robust against radiation degradation.

Accurate modelling of 3D-trench silicon sensor with enhanced timing performance and comparison with test beam measurements

This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the

Timing optimisation and analysis in the design of 3D silicon sensors: the TCoDe simulator

The development, performance and use of the TCoDe simulator, specifically dedicated to the fast simulation of carrier transportation phenomena in solid state sensors, are illustrated.

Currents Induced by Electron Motion

  • S. Ramo
  • Physics
    Proceedings of the IRE
  • 1939
A method is given for computing the instantaneous current induced in neighboring conductors by a given specified motion of electrons. The method is based on the repeated use of a simple equation

Laboratory Characterization of Innovative 3D Trench-design Silicon Pixel Sensors Using a Sub-Picosecond Precision Laser-Based Testing Equipment

In the next generation of experiments at the future high luminosity particle colliders, the identification of the interaction and decay vertices will be an extremely difficult task because of the

Radiation Detection and Measurement, Wiley, New York

  • 2010