1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

@article{Yu201515109C,
  title={1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation},
  author={Hao Yu and Marc Schaekers and E. Rosseel and Anthony Peter and J.-G Lee and W.-B Song and S. Demuynck and Thomas Chiarella and J.-A Ragnarsson and S. Kubicek and J. Everaert and Naoto Horiguchi and Kathy Barla and Dongsik Kim and Nadine Collaert and Aaron V.-Y. Thean and Kristin De Meyer},
  journal={2015 IEEE International Electron Devices Meeting (IEDM)},
  year={2015},
  pages={21.7.1-21.7.4}
}
Record-low contact resistivity (ρ<sub>c</sub>) for n-Si, down to 1.5×10<sup>-9</sup> Q-cm<sup>2</sup>, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the pc reduction. In situ doped Si:P with P concentration of 2×10<sup>21</sup> cm<sup>-3</sup> is used as the substrate, and dynamic surface anneal (DSA) boosts P activation. In addition, TiO<sub>x</sub… CONTINUE READING
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