1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD

@article{Mitomo2005130splMG,
  title={1.30-/spl mu/m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD},
  author={Jugo Mitomo and Masako Yokozeki and Yutaka Sato and Yoshiyuki Hirano and Tomoyuki Hino and Hirokazu Narui},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2005},
  volume={11},
  pages={1099-1102}
}
We performed epitaxial growth of GaInNAs laser diodes under various growth rates by metal-organic chemical vapor deposition. A strong correlation was found between the growth rate and the photoluminescence (PL) characteristics. At the optimum growth rate, PL peak intensity and full-width at half-maximum of the PL peak were at a maximum and minimum, respectively. As a result of processing on a GaInNAs narrow-ridge waveguide laser device, a strong correlation was found between the growth rate and… CONTINUE READING

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