1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation

@article{Nakamura200513splMA,
  title={1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation},
  author={Tatsuya Nakamura and Tomoyuki Okuda and Ryu Kobayashi and Yoshiaki Muroya and K.. Tsuruoka and Yosuke Ohsawa and Tatsuaki Tsukuda and Shu Ishikawa},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2005},
  volume={11},
  pages={141-148}
}
We have successfully fabricated 1.3-/spl mu/m AlGaInAs strain-compensated multiple-quantum-well (MQW) buried-heterostructure (BH) lasers by narrow-stripe selective metalorganic vapor-phase epitaxy. Based on the optimization of AlGaInAs strain compensated MQW and the Al-oxidation-free BH process, we obtained a low-threshold current of 12.5 mA and a relaxation frequency of more than 10 GHz at 85/spl deg/C for Fabry-Perot lasers. For distributed feedback lasers, we demonstrated a 10-Gb/s operation… CONTINUE READING
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