1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition

Abstract

We demonstrate here 1.2-/spl mu/m laser emission from a GaAsP-InGaAs strain compensated single-quantum-well (SQW) diode. This development enables the fabrication of vertical-cavity surface-emitting lasers for optical interconnection through Si wafers. Strain compensation and low temperature growth were used to extend the wavelength of emission to the… (More)

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