1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi₂Se₃ as a saturable absorber.

@article{Luo2013106Q,
  title={1.06 μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi₂Se₃ as a saturable absorber.},
  author={Zhengqian Luo and Yizhong Huang and Jian Weng and Huihui Cheng and Zhiqing Lin and Bin Xu and Zhiping Cai and Huiying Xu},
  journal={Optics express},
  year={2013},
  volume={21 24},
  pages={29516-22}
}
Passive Q-switching of an ytterbium-doped fiber (YDF) laser with few-layer topological insulator (TI) is, to the best of our knowledge, experimentally demonstrated for the first time. The few-layer TI: Bi₂Se₃ (2-4 layer thickness) is firstly fabricated by the liquid-phase exfoliation method, and has a low saturable optical intensity of 53 MW/cm² measured by the Z-scan technique. The optical deposition technique is used to induce the few-layer TI in the solution onto a fiber ferrule for… CONTINUE READING
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