1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance

@article{Yamauchi20061NN,
  title={1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance},
  author={Tomoyuki Yamauchi and Atsuhiro Kinoshita and Yoshishige Tsuchiya and Junji Koga and Koichi Kato},
  journal={2006 International Electron Devices Meeting},
  year={2006},
  pages={1-4}
}
This paper studies the Schottky barrier height (SBH) modulation effect induced by dipoles generation at the nickel silicide (NiSi)/silicon (Si) interface, based on first-principles calculations. Dipole comforting SBH is dramatically reduced to 0.1 eV in 1 nm region around the interface for the case of B atoms substituted for Si atoms. The results suggest that NiSi with appropriate dopant preparation is a plausible electrode material for ultimately small p-MOSFETs 
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