1-mW CW-RT monolithic VCSEL at 1.55 μm

@article{Boucart19991mWCM,
  title={1-mW CW-RT monolithic VCSEL at 1.55 μm},
  author={Julien Boucart and C. Starck and Fabienne Gaborit and A. P. Plais and Nicole Bouche and Estelle Derouin and Lawrence S. Goldstein and Catherine Rose Fortin and Yvon A. Carpentier and Pierre Salet and François Brillouet and J. -C. Jacquet},
  journal={IEEE Photonics Technology Letters},
  year={1999},
  volume={11},
  pages={629-631}
}
In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using a single InP substrate. The whole structure was grown monolithically using gas source molecular beam epitaxy and incorporates two original approaches. The first originality consists in the growth of a metamorphic GaAs-AlAs Bragg mirror directly on an InP-based cavity. The second novel idea is to use a tunnel junction for… CONTINUE READING

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