1-V Full-Swing Depletion-Load a-In–Ga–Zn–O Inverters for Back-End-of-Line Compatible 3D Integration

@article{Chi20161VFD,
  title={1-V Full-Swing Depletion-Load a-In–Ga–Zn–O Inverters for Back-End-of-Line Compatible 3D Integration},
  author={Li-Jen Chi and M. H. Yu and Y. J. Chang and Tuo-Hung Hou},
  journal={IEEE Electron Device Letters},
  year={2016},
  volume={37},
  pages={441-444}
}
To enable monolithic three-dimensional integration of the amorphous In-Ga-Zn-O (a-IGZO) and CMOS technologies, the a-IGZO inverters compatible with the low operating voltage (≤1 V) and process temperature of back-end-of-line CMOS have been investigated. We demonstrated a full-swing depletion-load inverter with a voltage gain up to 24 using a CMOS-compatible operating voltage of 1 V. The drive transistor was realized using a low-voltage enhancement-mode a-IGZO thin-film transistor (TFT) with a… CONTINUE READING
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