1 Ghz Gan Resonant Body Transistors with Enhanced Off-resonance Rejection

Abstract

We present 1 GHz Gallium Nitride (GaN) Resonant Body Transistors (RBTs) with order-of-magnitude improvement in offresonance rejection relative to previously reported devices. This is realized by strong mechanical coupling of a 1-port resonator with a second resonator in which a High Electron Mobility Transistor is used for sensing. As the first… (More)

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