1 Gallium arsenide pi-n radial structures for photovoltaic applications

Abstract

Gallium arsenide p-in radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. Spatially resolved and power dependent photocurrent measurements indicate that the p-in junction is… (More)

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