1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process

@article{Gaubert20061fNS,
  title={1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process},
  author={Philippe Gaubert and Akinobu Teramoto and Toshimasa Hamada and Mitsuaki Yamamoto and Koji Kotani and Tadahiro Ohmi},
  journal={IEEE Transactions on Electron Devices},
  year={2006},
  volume={53},
  pages={851-856}
}
This paper reports that the low-frequency noise in p-channel MOSFETs fabricated on [110] and (100) crystallographic oriented silicon is related to the microroughness of the silicon surface. Since the conventional RCA cleaning process makes the surface rough, especially in the case of [110] orientation, the authors developed the so-called 5-step room… CONTINUE READING