1/f noise of NMOS and PMOS transistors and their implications to design of voltage controlled oscillators

@article{K20021fNO,
  title={1/f noise of NMOS and PMOS transistors and their implications to design of voltage controlled oscillators},
  author={O K. and Namkyu Park and Dong-Jun Yang},
  journal={2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280)},
  year={2002},
  pages={59-62}
}
Low frequency noise of NMOS and PMOS transistors in a 0.25 /spl mu/m foundry CMOS process with a pure SiO/sub 2/ gate oxide layer is characterized for the entire range of MOSFET operation. Surprisingly, the measurement results showed that surface channel PMOS transistors have about an order of magnitude lower 1/f noise than NMOS transistors especially at V/sub GS/-V/sub TH/ less than /spl sim/0.4 V The data were used to show that a VCO using all surface channel PMOS transistors can have /spl… CONTINUE READING
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