• Published 2004

1/f Noise in MOS devices: Mobility or number fluctuations? (invited)

@inproceedings{Kauf20041fNI,
  title={1/f Noise in MOS devices: Mobility or number fluctuations? (invited)},
  author={Kauf and Vandamme and Xiaosong Li and Dominique Rigaud},
  year={2004}
}
Recent experimental studies on l/f noise in MOS transistors are reviewed. Arguments are given for the two schools of thought on the origin of l/f noise. The consequences of models based on carrier-number ALV or mobility fluctuations A p on the device geometry and on the bias dependence of the l/f noise are discussed. Circuit-simulation-oriented equations for the 1 / f noise are discussed. The effects of scaling down on the l/f noise is studied in the ohmic region as well as in saturation. In… CONTINUE READING

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