1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry

@article{Appenzeller20071fNI,
  title={1/f Noise in Carbon Nanotube Devices—On the Impact of Contacts and Device Geometry},
  author={Joerg Appenzeller and Yu-Ming Lin and J. Knoch and Zhihong Chen and Ph. Avouris},
  journal={IEEE Transactions on Nanotechnology},
  year={2007},
  volume={6},
  pages={368-373}
}
We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude A and the sample resistance R. By contacting semiconducting tubes with different metal electrodes we are able to show that a small A/R value by itself is no indication of a suitable metal/tube combination for logic applications. We discuss how current in a nanotube transistor is determined by the… CONTINUE READING
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Static and low frequency noise characterization of densely packed CNT-TFTs

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) • 2012

caling electromechanical sensors down to the nanoscale

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