0.13μm SiGe BiCMOS technology for mm-wave applications

@article{Avenier2008013mSB,
  title={0.13μm SiGe BiCMOS technology for mm-wave applications},
  author={Gregory Avenier and Pascal Chevalier and G. Troillard and B. Vandelle and Frederic Brossard and Linda Depoyan and Michel Buczko and Samuel Boret and Sebastien Montusclat and A. Margain and Sebastien Pruvost and S. T. Nicolson and K. H. K. Yau and Daniel Gloria and D. Dutartre and S. P. Voinigescu and Alain Chantre},
  journal={2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2008},
  pages={89-92}
}
This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. 
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