0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications

Abstract

-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we… (More)

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