0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)

@article{Aoki199001MM,
  title={0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)},
  author={Mutumi Aoki and Tutae Ishii and Toshiyuki Yoshimura and Yukihiro Kiyota and Shinpei Iijima and Toshiaki Yamanaka and T. Kure and Kiyonori Ohyu and Tetsuaki Nishida and Shinji Okazaki and Koichi Seki and Katsuhiro Shimohigashi},
  journal={International Technical Digest on Electron Devices},
  year={1990},
  pages={939-941}
}
Summary form only given. It was found that LICTs are very effective for providing low threshold voltages with good turn-offs in 0.1 mu m CMOS devices. Attention is given to device fabrication criteria, key process technologies used, and the features achieved using LICTs.<<ETX>>