格子不整合Sr/H-Si(111)における埋もれた水素単原子層界面の中性子反射率測定

@article{2010SrHSi111,
  title={格子不整合Sr/H-Si(111)における埋もれた水素単原子層界面の中性子反射率測定},
  author={山崎 竜也 and 山崎 大輔 and 朝岡 秀人 and 田口 富嗣 and 社本 真一 and 豊島 安健},
  journal={Hyomen Kagaku},
  year={2010},
  volume={31},
  pages={380-385}
}
Strontium (Sr) is a well-known template on Si for a highly-desirable transistor gate material SrTiO3. Sr layers are grown epitaxially on hydrogen-terminated Si(111) surface despite the large lattice mismatch of 12%. However, there are still many unclear points concerning the specific interface structure. We need to study how the buried monatomic hydrogen layer behaves to manage the large mismatch. In order to clarify its buried hetero-interface structure related to monatomic hydrogen layer, Si… CONTINUE READING