“Zero” drain-current drift of inversion-mode NMOSFET on InP (111)A surface

@article{Wang2011ZeroDD,
  title={“Zero” drain-current drift of inversion-mode NMOSFET on InP (111)A surface},
  author={Chen Wang and Min Xu and Robert J. Colby and Eric A Stach and Peide D. Ye},
  journal={69th Device Research Conference},
  year={2011},
  pages={93-94}
}
InP is a commonly used compound semiconductor with wide applications in electronic, optoelectronic, and photonic devices. Compared to GaAs, InP is widely believed to be a more forgiving material with respect to Fermi level pinning and has a higher electron saturation velocity (2.5×107 cm/s) as well. It could be a viable channel material for high-speed logic applications if a high-quality, thermodynamically stable high-k dielectric could be found. [1] It is of great importance for the… CONTINUE READING