‘characterization of Epitaxial Growth of Semiconducting Rhenium “disilicide” Films

@inproceedings{Alamos2000characterizationOE,
  title={‘characterization of Epitaxial Growth of Semiconducting Rhenium “disilicide” Films},
  author={Los Alamos},
  year={2000}
}
We have characterized, through transmission electron microscopy (TEM), the ReSiz.Xthin films grown by reactive deposition on (001) Si. ReSi2.Xthin films exhibit a distorted bodycentered tetragonal MoSi2-type structure, and have excellent epitaxy on (001) Si since the face diagonal of the Si unit cell is equal to the c lattice parameter of silicide. The Si-deficient composition in the “disilicide” may be accommodated by collapse and shear of missing Si planes to form planar faults. Kirkendall… CONTINUE READING