(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

@inproceedings{Ohno1996GaMnAsAN,
  title={(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs},
  author={Hideo Ohno and Aidong Shen and Fumihiro Matsukura and Akira Oiwa and Akira Endo and Shingo Katsumoto and Yasuhiro Iye},
  year={1996}
}
  • Hideo Ohno, Aidong Shen, +4 authors Yasuhiro Iye
  • Published 1996
  • Physics
  • A new GaAs‐based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x‐ray diffraction and shown to increase with the increase of Mn composition, x. Well‐aligned in‐plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer. 

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