# $f_{\max}$ Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor

@article{Jhon2009f\_maxIB,
title={\$f\_\{\max\}\$ Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS Transistor},
author={Heesauk Jhon and Jaeho Lee and Byoungchan Oh and I. Song and Yeonam Yun and Byung-Gook Park and Jong-Duk Lee and Hyungcheol Shin},
journal={IEEE Electron Device Letters},
year={2009},
volume={30},
pages={1323-1325}
}
In this letter, <i>f</i> <sub>max</sub> improvement of a circuit-level radio-frequency (RF) transistor with systematic layout variations is presented in deep-submicrometer CMOS technology. We confirmed that the circuit-level MOS transistor has a tradeoff among the extrinsic capacitive and resistive parasitics (<i>C</i> <sub>gd</sub>, <i>C</i> <sub>gs</sub>, and <i>Rg</i>) on circular gate metal layers. Furthermore, it reduces the extrinsic <i>C</i> <sub>gd</sub> and <i>Rg,</i> which have great… Expand
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