$\hbox{1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

@article{Beneventi2012hbox1fNI,
  title={\$\hbox\{1\}/f\$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives},
  author={Giovanni Betti Beneventi and Massimo Ferro and Paolo Fantini},
  journal={IEEE Electron Device Letters},
  year={2012},
  volume={33},
  pages={1559-1561}
}
In this letter, we study the low-frequency noise behavior of RESET-state Phase-Change Memory (PCM) devices belonging to a 45-nm technology node. Furthermore, by dealing with a typical case study, we calculate the fluctuation of the cell readout current induced by 1/f noise and provide predictions for estimating its effect in RESET-state PCM of future technology nodes. 
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