Zuocai Wang

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We fabricate a quantum-dot (QD) superlumenescent diode (SLD) integrated with a semiconductor optical amplifier (SOA). The integrated device exhibits coordinative working between the SLD and SOA when the two sections are pumped with a series of different currents. However, the SLD source affects the device behavior not via the amount of energy supplied by(More)
Using AlN submounts with metal patterns made by a photolithographic process, the two-section quantum-dot superluminescent diodes were mounted epi-down on the heatsinks. It is demonstrated that the epi-down mounting process can offer improved heat dissipation and optical performance in the two-section devices. Under continuous-wave operation without(More)
Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in(More)
In this work, a high-power and broadband quantum dot superluminescent diode (QD-SLD) is achieved by using a two-section structure. The QD-SLD device consists of a tapered titled ridge waveguide section supplying for high optical gain and a straight titled ridge waveguide section to tune optical feedback from the rear facet of the device. The key point of(More)
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