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Enhanced performance of vertical double gate MOSFET (VDGM) with oblique rotating implantation (ORI) method

• Ismail Saad, Munawar Agus Riyadi, Zul Atfyi F. M. N., Afifah Maheran Abdul Hamid, Razali Ismail
• 2010 IEEE International Conference on…
• 2010

An enhanced performance of vertical double gate MOSFET (VDGM) structure was revealed by adopting the oblique rotating ion implantation (ORI) method. The device structure was simulated based on TCAD… (More)

Reduced parasitic capacitances analysis of nanoscale vertical MOSFET

• Ismail Saad, Munawar Agus Riyadi, Zul Atfyi F. M. N., Razali Ismail
• 2010 IEEE International Conference on…
• 2010

Quantitative comparison analysis was made between standard vertical MOSFET, vertical MOSFET with FILOX (Fillet Local Oxidation) and vertical MOSFET that combine ORI (Oblique Rotating Implantation)… (More)

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