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The paper reports an theoretical investigation on the effects of material intermixing in epitaxial Ga(As)Sb/GaAs quantum dots (QDs). Conditions of type-II band alignment of Ga(As)Sb/GaAs is considered. The fabrication of Ga(As)Sb/GaAs QDs by molecular beam epitaxy is briefly described. Finite element analysis of strain in and around QD is performed.(More)
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