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Device Fabrication: The flexible OELD was prepared onto the PI substrate with the ITO film (anode) grown at 150 C by an rf magnetron sputtering method. The OELD prepared in the present study consisted of a typical organic double layer structure, having hole-transporting and electron-transporting/emitting layers between two electrodes: PI (250 lm)/ITO (120(More)
  • J R Sheats, H Antoniadis, +33 authors S Chen
height. Assuming a linear relationship between thickness and absorption, as well as assuming a direct relationship between absorption and emission, the fluorescence signal, measured by NSOM, is expected to increase by the same percentage. The increase in fluorescence between the tallest feature and the background signal of 13 kcps is 13 kcps. Although this(More)
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