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In this work we reported ET (electrical testing) failure case studies related to the process drift of barrier metal deposition (BM) during W via/CA process loops. We presented detailed TEM failure analysis in order to understand the failure mechanism and root cause behind the high via/CA resistance. We demonstrated the importance of TEM characterization and(More)
In this study, failure analysis was conducted to investigate the root cause of Ti/Ni/Ag film peeling from Si wafer surface. The adhesion strength of Ti/Ni/Ag film on Si was quantitatively measured by 4 Point Bending method (4PB), where a novel delamination initiation method was introduced to significantly reduce the energy barrier for the delamination(More)
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