Mobility enhancement in surface channel SiGe PMOSFETs with HfO<sub>2</sub> gate dielectricsZhonghai Shi, D. Onsongo, Kazuko Onishi, J. C. Lee, S. K. BanerjeeIEEE Electron Device Letters2003We report for the first time drive current enhancement and higher mobilities than the universal mobility for SiO/sub 2/ on Si in compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel… (More)