Zhong-Cheng Su

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In this work, we statistically examine the emerging high/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials(More)
In this study, a three-dimensional ''atomistic " coupled device-circuit simulation is performed to explore the impact of process-variation-effect (PVE) and random-dopant-fluctuation (RDF) on static noise margin (SNM) of 16-nm complementary metal–oxide–semiconductor (CMOS) static random access memory (SRAM) cells. Fluctuation suppression approaches, based on(More)
In this work, we statistically examine the emerging high-&#x03BA;/ metal gate work-function fluctuation (WKF) induced threshold voltage (V<inf>th</inf>) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to(More)
Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxidesemiconductor (CMOS) field(More)
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