Zhixi Bian

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One of the crucial steps in the design of an integrated circuit is the minimization of heating and temperature non-uniformity. Current temperature calculation methods, such as finite element analysis and resistor networks have considerable computation times, making them incompatible for use in routing and placement optimization algorithms. In an effort to(More)
—We investigate thermal effects in widely tunable laser transmitters based on an integrated single chip design. The chip contains a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption modulator (EAM). The thermal impedance of the ridge structure is(More)
The creation of a sustainable energy generation, storage, and distribution infrastructure represents a global grand challenge that requires massive transnational investments in the research and development of energy technologies that will provide the amount of energy needed on a sufficient scale and timeframe with minimal impact on the environment and have(More)
In this paper, we explore electron filtering as a technique to increase the Seebeck coefficient and the thermoelectric power factor of heterostructured materials over that of the bulk. We present a theoretical model in which the Seebeck coefficient and the power factor can be increased in an In 0.53 Ga 0.47 As-based composite material. Experimental(More)
We studied the cross-plane lattice and electronic thermal conductivities of superlattices made of InGaAlAs and InGaAs films, with the latter containing embedded ErAs nanoparticles ͑denoted as ErAs:InGaAs͒. Measurements of total thermal conductivity at four doping levels and a theoretical analysis were used to estimate the cross-plane electronic thermal(More)
The effect of nanoparticles on the thermoelectric power factor is investigated using the relaxation time approximation. The partial-wave technique is used for calculating the nanoparticle scattering cross section exactly. We validate our model by comparing its results to the experimental data obtained for ErAs:InGaAlAs samples. We use the theory to maximize(More)
We utilize the transient Harman technique to measure the thermoelectric figure of merit of thin films. A device structure is designed and fabricated to extract the thermoelectric properties of 20 ␮m thick film composed of InGaAlAs semiconductor with embedded ErAs nanoparticles. High-speed voltage measurements with 63 dB of dynamic range and 200 ns(More)
Power Blurring (PB) methods enable calculation of IC temperature profiles from the power dissipation map with calculation speeds hundreds of times faster than finite element methods (FEM). Both static [1,2] and transient distributions can be obtained [3]. Extensions to 3D chips [4] and to the inverse problem, i.e. estimating the power map from the(More)
The transient Harman technique is used to characterize the cross-plane ZT of InGaAs/InGaAlAs superlattice structures with embedded ErAs nanoparticles in the well layers. ErAs nanoparticles have proven to substantially reduce the thermal conductivity while slightly increasing the electrical conductivity of bulk InGaAs. The InGaAs/InGaAlAs superlattice(More)