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To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared(More)
Group IIIA elements, Al, Ga, or In, etc., doped Sb-Te materials have proven good phase change properties, especially the superior data retention ability over popular Ge2Sb2Te5, while their phase transition mechanisms are rarely investigated. In this paper, aiming at the phase transition of Al-Sb-Te materials, we reveal a dominant rule of local structure(More)
Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic(More)
The rational design of nanoheterostructured materials has attracted much attention because of its importance for developing highly efficient LIBs. Herein, we have demonstrated that internal Mo(6+) doped TiO2 nanocrystals in situ decorated with highly dispersed MoO3 clusters have been realized by a facile and rapid flame spray pyrolysis route for(More)
In order to calculate the temperature of the phase change memory (PCM) cell, a thermal physical model of the PCM device having Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> (GST) layer has been proposed and demonstrated. By calculating and comparing with the Joule heating of the PCM cell at different programming state between based on the voltage - current(More)
A fully functional phase change memory (PCM) was fabricated and demonstrated that enables ultra low 0.3mA SET and 0.5mA RESET writing currents through a tungsten bottom electrode contact (BEC) with diameter of 90nm. This was achieved by integrating Si<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> (SST) storage material into 0.13um standard CMOS technology and(More)