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We report substantially enlarged lateral photovoltaic effect (LPE) in the ZnO/Ag/Si nanostructures. The maximum LPE sensitivity (55.05 mv/mm) obtained in this structure is about seven times larger than that observed in the control sample (7.88 mv/mm) of ZnO/Si. We attribute this phenomenon to the strong localized surface plasmon resonances (LSPRs) induced(More)
In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently(More)
Owing to the innate stabilization of built-in potential in p-n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral photo-voltage (LPV) in Cu dusted ultrathin(More)
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