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In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature(More)
Compared with traditional single nickel layer electrode, multilayers electrode for backside chips of power devices has higher thermal and electrical reliability. In this paper, Ti/Ni/Ag metal trilayers were deposited on single crystal silicon (111) substrates by DC magnetron sputtering technique. The effect of thermal treatment on adhesion strength of(More)
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