Zhi-Qian Ren

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The double gate (DG) MOSFET and similar structures provide the electrostatic integrity needed to scale devices to their limits. In this paper, we use a non-equilibrium Green's function (NEGF) approach to examine 10 nm-scale device design and manufacturing issues realistically. NEGF simulations are used to examine: (i) choice of body thickness, (ii) effect(More)
Article history: Received 24 May 2013 Received in revised form 23 June 2013 Accepted 6 July 2013 The influence of a humid environment on the reliability of microelectromechanical systems (MEMS) needs to be considered in applications such as chemical and biological sensors. We have examined the effects of water on the mechanical properties of silicon(More)
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