Zhenyu Yang

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side-gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be(More)
  • 1